Memory effect and redistribution of Mg into sequentially regrown GaN layer by metalorganic chemical vapor deposition
Mg redistribution into a subsequently regrown GaN epilayer by metalorganic chemical vapor
deposition (MOCVD) is studied. Dopant profiles from secondary ion mass spectrometry …
deposition (MOCVD) is studied. Dopant profiles from secondary ion mass spectrometry …
Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy
G Li, C Jagadish - Solid-State Electronics, 1997 - Elsevier
In this article, δ-doping of III–V semiconductors (III–Vs) grown by metal organic vapour
phase epitaxy (MOVPE) is reviewed in respect to the parametric dependencies of δ-doping …
phase epitaxy (MOVPE) is reviewed in respect to the parametric dependencies of δ-doping …
Doping effects on minority carrier parameters in bulk GaAs
S Ilahi - Physica B: Condensed Matter, 2023 - Elsevier
In this paper, we measured the experimental amplitude and phase of the Photothermal
deflection signal for bulk GaAs “silicon” doped n+ type,“chromium” doped n type and …
deflection signal for bulk GaAs “silicon” doped n+ type,“chromium” doped n type and …
Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN
YL Chang, M Ludowise, D Lefforge, B Perez - Applied physics letters, 1999 - pubs.aip.org
The diffusion behaviors of Mg in GaN and AlGaN layers are investigated using otherwise
undoped GaN test structures containing three Mg-dopant spikes. These simplified structures …
undoped GaN test structures containing three Mg-dopant spikes. These simplified structures …
High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes
T Onishi, K Inoue, K Onozawa… - IEEE journal of …, 2004 - ieeexplore.ieee.org
This paper reports on high-power and high-temperature operation of an AlGaInP-based high-
power red laser diode with magnesium (Mg)-doped quaternary-alloy cladding layer. The use …
power red laser diode with magnesium (Mg)-doped quaternary-alloy cladding layer. The use …
Point-defects assisted Zn-diffusion in AlGaInP/GaInP systems during the MOVPE growth of inverted multijunction solar cells
M Hinojosa, I García, S Dadgostar… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the
comparison of different structures that emulate the back-surface field (BSF) and base layers …
comparison of different structures that emulate the back-surface field (BSF) and base layers …
Molecular dynamics of magnesium diffusion in wurtzite-type GaN crystal
K Harafuji, T Tsuchiya… - Japanese journal of …, 2004 - iopscience.iop.org
The behaviors of Ga and N vacancies (Schottky defects, Frenkel defects), lattice-site and
interstitial Mg atoms, and interstitial H atoms are studied in the wurtzite-type GaN crystal by …
interstitial Mg atoms, and interstitial H atoms are studied in the wurtzite-type GaN crystal by …
Diffusion modeling of zinc implanted into GaAs
MP Chase, MD Deal, JD Plummer - Journal of applied physics, 1997 - pubs.aip.org
The diffusion of implanted zinc in GaAs is studied and modeled for annealing temperatures
of 625 through 850° C. Secondary ion mass spectrometry data for the annealed profiles are …
of 625 through 850° C. Secondary ion mass spectrometry data for the annealed profiles are …
Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy
N Nordell, A Schöner, MK Linnarsson - Journal of electronic materials, 1997 - Springer
The atomic concentration profiles in 4H and 6H SiC created by Al and B doping turn-on and
turn-off during vapor phase epitaxy (VPE) was investigated by secondary ion mass …
turn-off during vapor phase epitaxy (VPE) was investigated by secondary ion mass …
Hole‐dependent diffusion of implanted Mg in GaAs
HG Robinson, MD Deal, DA Stevenson - Applied physics letters, 1991 - pubs.aip.org
Magnesium implants in GaAs exhibit two types of diffusion during annealing: uphill diffusion
in the peak of the implant and concentration‐dependent diffusion into the bulk. The uphill …
in the peak of the implant and concentration‐dependent diffusion into the bulk. The uphill …