Comparison of germanium bipolar junction transistor models for real-time circuit simulation
Abstract The Ebers-Moll model has been widely used to represent Bipolar Junction
Transistors (BJTs) in Virtual Analogue (VA) circuits. An investigation into the validity of this …
Transistors (BJTs) in Virtual Analogue (VA) circuits. An investigation into the validity of this …
[PDF][PDF] Guitar effects: pedal emulation and identification
B Holmes - 2019 - pure.qub.ac.uk
A guitarist's search for 'tone'–their ideal timbre–can lead them to exploring countless guitar
effects. Many players yearn for the tone of equipment from the early days of electric guitars …
effects. Many players yearn for the tone of equipment from the early days of electric guitars …
[PDF][PDF] Si 和SiGe 三极管Early 效应模型及在电路仿真器中的应用综述
徐小波， 张林， 王晓艳， 谷文萍， 胡辉勇， 葛建华 - 电子学报, 2016 - ejournal.org.cn
Early 效应作为表征双极器件关键性能的因素之一, 影响输出跨导, 传输电流, 基区渡越时间,
电流增益, 扩散电容等器件特性. 本文从Early 效应的基本定义出发, 综述了Early 电压的起源 …
电流增益, 扩散电容等器件特性. 本文从Early 效应的基本定义出发, 综述了Early 电压的起源 …
BJT 等效电路模型的发展
罗杰馨， 陈静， 伍青青， 王曦 - 2010 - chinaelectrondevices.seu.edu.cn
随着BJT 尺寸的缩小以及BJT 广泛应用于高速和RF 电路, 有效及准确的BJT
电路设计要求更加精确的等效电路模型. 通过介绍模型的基本原理及其对BJT …
电路设计要求更加精确的等效电路模型. 通过介绍模型的基本原理及其对BJT …
MEXTRAM model based SiGe HBT large-signal modeling
H Bo, L Shoulin, C Jiali, Y Qiuyan… - Journal of …, 2010 - iopscience.iop.org
An improved large-signal equivalent-circuit model for SiGe HBTs based on the MEXTRAM
model (level 504.5) is proposed. The proposed model takes into account the soft knee effect …
model (level 504.5) is proposed. The proposed model takes into account the soft knee effect …
Failure mechanisms implementation into SiGe HBT compact model operating close to safe operating area edges
M Couret - 2020 - theses.hal.science
In an ever-growing terahertz market, BiCMOS technologies have reached cut-off frequencies
beyond 0.5 THz. These dynamic performances are achieved thanks to the current …
beyond 0.5 THz. These dynamic performances are achieved thanks to the current …
Scalable large‐signal model for SiGe HBTs
B Han, T Zhou, X Xu, P Li, J Gao - International Journal of RF …, 2012 - Wiley Online Library
In this article, a scalable large‐signal model for SiGe heterojunction bipolar transistors
(HBTs) is presented. Compared with SPICE Gummel‐Poon model, the proposed model has …
(HBTs) is presented. Compared with SPICE Gummel‐Poon model, the proposed model has …
[PDF][PDF] New generation verilog-A model development tools: VAPP and VALint
A Mahmutoglu, X Wang… - EECS Dept., University of …, 2018 - eecs.berkeley.edu
We present software tools, VAPP and VALint, for the development of new Verilog-A compact
models and also for applications involving existing models. VAPP, the Berkeley Verilog-A …
models and also for applications involving existing models. VAPP, the Berkeley Verilog-A …
Systematic large-signal verification procedure for mm-wave SiGe bipolar transistors
J Essing, D Leenaerts… - 2012 IEEE Bipolar …, 2012 - ieeexplore.ieee.org
This paper describes a systematic large-signal verification procedure for mm-wave SiGe
bipolar transistors. The verification paradigm is composed out of three complementary …
bipolar transistors. The verification paradigm is composed out of three complementary …
Méthodologie de co-conceptiond'un filtre-LNA de 60 GHz
R de Sousa Marinho - 2019 - theses.hal.science
This work presents the results and discussions about shared design (co-design) of
structures for a RF receptor in millimetric waves. Two structures were mainly studied …
structures for a RF receptor in millimetric waves. Two structures were mainly studied …