Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced
power electronic devices. This material has been considered to be useful for abrasive …

High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …

Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

The review article describes the interplay of fundamental research and advanced processes
that have made SiC a unique semiconductor material for power electronic devices. Related …

A full-potential band structure calculation, within the local density approximation to the
density functional theory, has been performed for the polytypes 3C, 2H, 4H, and 6H of SiC …

SiC materials are currently metamorphosing from research and development into a market
driven manufacturing product. SiC substrates are currently used as the base for a large …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …