Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires
Z Gačević, M Holmes, E Chernysheva… - ACS …, 2017 - ACS Publications
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the
fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in …
fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in …
Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and
display applications. In this paper, we demonstrate green-emission (512 nm) InGaN …
display applications. In this paper, we demonstrate green-emission (512 nm) InGaN …
How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field
M Pristovsek, N Hu - Laser & Photonics Reviews, 2024 - Wiley Online Library
The theoretical expectation of semi‐polar light emitting diodes (LEDs) is reviewed and
compared it to the experimental data. The reported peak internal quantum efficiency (IQE) of …
compared it to the experimental data. The reported peak internal quantum efficiency (IQE) of …
Ultrafast, polarized, single-photon emission from m-plane InGaN quantum dots on GaN nanowires
We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots
(QDs) embedded on the side-walls of GaN nanowires. A combination of electron …
(QDs) embedded on the side-walls of GaN nanowires. A combination of electron …
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
Solid-state single photon sources with polarisation control operating beyond the Peltier
cooling barrier of 200 K are desirable for a variety of applications in quantum technology …
cooling barrier of 200 K are desirable for a variety of applications in quantum technology …
Small-angle neutron scattering study of differences in phase behavior of silica nanoparticles in the presence of lysozyme and bovine serum albumin proteins
The differences in phase behavior of anionic silica nanoparticles (88 Å) in the presence of
two globular proteins [cationic lysozyme (molecular weight (MW) 14.7 kD) and anionic …
two globular proteins [cationic lysozyme (molecular weight (MW) 14.7 kD) and anionic …
Spectral diffusion time scales in InGaN/GaN quantum dots
ABSTRACT A detailed temporal analysis of the spectral diffusion phenomenon in single
photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both …
photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both …
Improvement of single photon emission from InGaN QDs embedded in porous micropillars
In many InGaN/GaN single photon emitting structures, significant contamination of the single
photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum …
photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum …
Non-polar nitride single-photon sources
Non-polar nitride single-photon sources are developed in order to minimise the undesired
side effects caused by the internal fields of polar nitrides, while retaining the benefits of high …
side effects caused by the internal fields of polar nitrides, while retaining the benefits of high …
Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
We present here a combined experimental and theoretical analysis of the radiative
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …