[HTML][HTML] Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

T Zine-eddine, H Zahra, M Zitouni - Journal of Science: Advanced Materials …, 2019 - Elsevier
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …

Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

GP Rao, TR Lenka, R Singh, HPT Nguyen - Journal of the Korean …, 2022 - Springer
In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …

Gallium arsenide and gallium nitride semiconductors for power and optoelectronics devices applications

RC Sharma, R Nandal, N Tanwar… - Journal of Physics …, 2023 - iopscience.iop.org
The advancement in technology in semiconductor materials significantly contributed in
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …

Performance analysis of AlGaN/GaN HEMT for RF and microwave nanoelectronics applications

G Purnachandra Rao, R Singh, TR Lenka - HEMT Technology and …, 2022 - Springer
In recent days, wide bandgap semiconductor materials constructed with GaN are exhibiting
incredible performances in developing devices that are handling applications like high …

Operation Principle of AlGaN/GaN HEMT

GP Rao, R Singh, TR Lenka - HEMT Technology and Applications, 2022 - Springer
Nowadays, the development of wide bandgap-based devices in power electronics has
become more prominent to ameliorate the energy capability of devices. Furthermore, it can …

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs

BK Jebalin, AS Rekh, P Prajoon, NM Kumar… - Microelectronics …, 2015 - Elsevier
In this work, analysis and optimization of different high-k material in the passivation layer is
carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron …

Comparative study of variations in gate oxide material of a novel underlap DG MOS-HEMT for analog/RF and high power applications

A Mondal, A Roy, R Mitra, A Kundu - Silicon, 2020 - Springer
In this paper an Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal
Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with gate oxide …

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: a simulation study

M Haziq, H Kawarada, S Falina, M Syamsul - Results in Physics, 2024 - Elsevier
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT)
with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is …

Metal-Free High-Overtone Bulk Acoustic Resonators with Outstanding Acoustic Match and Thermal Stability

J Cheng, Z Peng, W Zhang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
This letter presents a novel type of epitaxial gallium nitride (GaN) on semi-insulating silicon
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

MAK Khan, MA Alim, C Gaquiere - Microelectronic Engineering, 2021 - Elsevier
For the commercial implementation of GaN-based high electron mobility transistor (HEMT)
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …