[HTML][HTML] Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
Gallium arsenide and gallium nitride semiconductors for power and optoelectronics devices applications
RC Sharma, R Nandal, N Tanwar… - Journal of Physics …, 2023 - iopscience.iop.org
The advancement in technology in semiconductor materials significantly contributed in
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …
Performance analysis of AlGaN/GaN HEMT for RF and microwave nanoelectronics applications
In recent days, wide bandgap semiconductor materials constructed with GaN are exhibiting
incredible performances in developing devices that are handling applications like high …
incredible performances in developing devices that are handling applications like high …
Operation Principle of AlGaN/GaN HEMT
Nowadays, the development of wide bandgap-based devices in power electronics has
become more prominent to ameliorate the energy capability of devices. Furthermore, it can …
become more prominent to ameliorate the energy capability of devices. Furthermore, it can …
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
In this work, analysis and optimization of different high-k material in the passivation layer is
carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron …
carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron …
Comparative study of variations in gate oxide material of a novel underlap DG MOS-HEMT for analog/RF and high power applications
In this paper an Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal
Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with gate oxide …
Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with gate oxide …
Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: a simulation study
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT)
with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is …
with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is …
Metal-Free High-Overtone Bulk Acoustic Resonators with Outstanding Acoustic Match and Thermal Stability
J Cheng, Z Peng, W Zhang… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
This letter presents a novel type of epitaxial gallium nitride (GaN) on semi-insulating silicon
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …
carbide (4H-SiC)-based high-overtone bulk acoustic resonators (HBARs) that eliminates the …
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
For the commercial implementation of GaN-based high electron mobility transistor (HEMT)
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …