GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …

GeSn alloys have been regarded as a potential lasing material for a complementary metal–
oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

Zinc oxide (ZnO) is a II–VI group semiconductor with a wide direct bandgap and is an
important material for various fields of industry and high-technological applications. The …