[HTML][HTML] Evaluation of antiparallel SiC Schottky diode in SiC MOSFET phase-leg configuration of synchronous rectifier
H Qin, R Huang, H Hu, Q Xun, W Chen, D Fu - Energy Reports, 2023 - Elsevier
The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss
during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the …
during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the …
Aplicação de módulo semicondutores híbridos em acionamentos elétricos
FA Pongelupe, AF Cupertino… - Eletrônica de …, 2021 - journal.sobraep.org.br
Módulos semicondutores híbridos consistem em dispositivos que combinam interruptores
de silício com interruptores de algum material semicondutor de larga banda proibida (do …
de silício com interruptores de algum material semicondutor de larga banda proibida (do …
A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate
SJ Li, XC Deng, X Li, X Li, Y Wen - Solid State Phenomena, 2024 - Trans Tech Publ
Bipolar degradation of the intrinsic bipolar body diode is one of the most important reliability
problems associated with SiC MOSFET. In this paper, a voltage adjustable diode (VAD) …
problems associated with SiC MOSFET. In this paper, a voltage adjustable diode (VAD) …
[图书][B] Analyse und Optimierung der parasitären Elemente in integrierten SiC-Traktionsumrichtern hoher Leistungsdichte
J Schnack - 2023 - books.google.com
Für einen erfolgreichen Einsatz von Wide-Bandgap mit einer hohen Flankensteilheit ist die
Beherrschung der parasitären Elemente von zentraler Bedeutung. Am Beispiel eines …
Beherrschung der parasitären Elemente von zentraler Bedeutung. Am Beispiel eines …
1200 V TRENCHSTO (TM) IGBT7 H7 and Emitter-Controlled EC7 Rapid Diode Technologies Define an Enhanced Benchmark for Improved Energy-Efficient, Fast …
J Cerezo, AK Sekar - PCIM Europe 2023; International …, 2023 - ieeexplore.ieee.org
This paper presents the new 1200 V IGBT7 H7 discrete family, which uses the latest 1200 V
TRENCHSTOP (TM) IGBT7 H7 and emitter-controlled EC7 Rapid diode technologies …
TRENCHSTOP (TM) IGBT7 H7 and emitter-controlled EC7 Rapid diode technologies …
1.2 kV Trench IGBT with SiC JBS Diode for High Frequency Switching Applications
N Schneider, E Buitrago, Y Arango… - PCIM Europe 2022; …, 2022 - ieeexplore.ieee.org
A hybrid system consisting of the next generation low voltage (LV, 1200 V, 150 A) fine
pattern (FP) trench gate Si-IGBT and our state-of-the-art SiC-JBS diode at Hitachi Energy is …
pattern (FP) trench gate Si-IGBT and our state-of-the-art SiC-JBS diode at Hitachi Energy is …