Carbon nanotubes have been attracting considerable interest among material scientists,
physicists, chemists, and engineers for almost 30 years. Owing to their high aspect ratio …

The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR)
imaging system applications: linear arrays for scanning systems (first generation) and two …

Emerging low-dimensional materials exhibit the potential in realizing next-generation room-
temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor …

This paper reports negative photoconductivity mechanism in flexible black phosphorus (BP)
transistors built on freestanding polyimide film. Near-infrared laser (λ= 830 nm) excitation …

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …

Layered materials (LMs) produced by liquid phase exfoliation (LPE) can be used as building
blocks for optoelectronic applications. However, when compared with mechanically …

Third-generation infrared (IR) systems are being developed nowadays. In the common
understanding, these systems provide enhanced capabilities-like larger numbers of pixels …

The authors report a room temperature operating InAs quantum-dot infrared photodetector
grown on InP substrate. The self-assembled InAs quantum dots and the device structure …

Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important
technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost …