Electron-induced fragmentation mechanisms in organic monomers and their implications for photoresist optimization for EUV lithography

A Rathore, M Cipriani, CC Huang, L Amiaud… - Physical Chemistry …, 2021 - pubs.rsc.org
Secondary electrons generated during the Extreme Ultraviolet Lithography (EUVL) process
are predominantly responsible for inducing important patterning chemistry in photoresist …

[PDF][PDF] New material chemistry exploration for Extreme Ultraviolet Lithography

A Rathore - 2020 - lirias.kuleuven.be
Electronic devices are an integral part of modern society, enabling and supporting most of
the day-to-day tasks. In the past few decades, the power of these devices has increased …