A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-
field-plate T-gate. The devices exhibit an extrinsic f T and f MAX of 156 GHz and 308 GHz …
field-plate T-gate. The devices exhibit an extrinsic f T and f MAX of 156 GHz and 308 GHz …
Flexible gallium nitride for high‐performance, strainable radio‐frequency devices
Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices
for transmission of radio‐frequency (RF) signals over large distances for more efficient …
for transmission of radio‐frequency (RF) signals over large distances for more efficient …
ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors
(HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H …
(HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H …
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
We report the RF power results of Sc (Al, Ga) N/GaN high electron mobility transistors
(HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two …
(HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two …
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
In this paper, the RF and DC performance of AlGaN/GaN HEMT having p-type doping in
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
JSR Kumar, HV Du John, IV BinolaKJebalin… - Microelectronics …, 2023 - Elsevier
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
[HTML][HTML] Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
The advantage of GaN is the capability of producing amplifiers with high output power and
efficiency. At microwave frequencies, this performance has been achieved; however, when …
efficiency. At microwave frequencies, this performance has been achieved; however, when …
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
This article presents a modeling approach and its implementation to study the impact of the
top-side diamond integration on the and performance of a millimeter-wave (mm-wave) N …
top-side diamond integration on the and performance of a millimeter-wave (mm-wave) N …