Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor

G Zhou, B Sun, X Hu, L Sun, Z Zou, B Xiao… - Advanced …, 2021 - Wiley Online Library
The negative photoconductance (NPC) effect, defined as an increase in resistance upon
exposure to illumination, holds great potential for application in photoelectric devices. A …

One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device

B Ahn, Y Kim, M Kim, HM Yu, J Ahn, E Sim, H Ji… - Nano Letters, 2023 - ACS Publications
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin–orbit coupling
and valley-and topology-related properties. However, TMD-based devices suffer from traps …

The functionalization of polyacrylamide with MoS 2 nanoflakes for use in transient photodetectors

A Verma, P Chaudhary, RK Tripathi… - Sustainable Energy & …, 2021 - pubs.rsc.org
Herein, we report solvent-free frontal polymerization of acrylamide monomers with transition
metal dichalcogenides (TMDs), ie MoS2 nanoflakes. Scanning electron microscopic (SEM) …

Negative Photoconductivity of Fe3GeTe2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra‐Broadband Photodetection

S Ma, G Li, Z Li, T Wang, Y Zhang, N Li… - Advanced …, 2024 - Wiley Online Library
Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for
comprehensively grasping their intrinsic properties and broadening future application fields …

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

M Hussain, S Aftab, SHA Jaffery, A Ali, S Hussain… - Scientific Reports, 2020 - nature.com
Abstract 2D layered germanium selenide (GeSe) with p-type conductivity is incorporated
with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to …

Polymer-Waveguide-Integrated 2D Semiconductor Heterostructures for Optical Communications

JH Kim, J Lee, C Seo, GH Han, BW Cho, J Kim… - Nano Letters, 2023 - ACS Publications
The demand for high-speed and low-loss interconnects in modern computer architectures is
difficult to satisfy by using traditional Si-based electronics. Although optical interconnects …

Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero‐Bilayers

DH Luong, HS Lee, GP Neupane, S Roy… - Advanced …, 2017 - Wiley Online Library
Vertically stacked van der Waals (vdW) heterostructures have been suggested as a robust
platform for studying interfacial phenomena and related electric/optoelectronic devices …

Defects induced persistent photoconductivity in monolayer MoS2

C Chandan, S Sarkar, B Angadi - Applied Physics Letters, 2021 - pubs.aip.org
Understanding the relaxation mechanisms of photoexcited charge carriers in two-
dimensional materials is indispensable from the fundamental point of view and for future …

Gate tunable photoresponse of a two-dimensional pn junction for high performance broadband photodetector

TU Tran, DA Nguyen, NT Duong, DY Park… - Applied Materials …, 2022 - Elsevier
Optoelectronic devices based on two-dimensional (2D) van der Waals (vdWs) materials and
their heterostructures are promising owing to their intriguing properties. However, the …

Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS2

JY Wu, YT Chun, S Li, T Zhang… - ACS applied materials & …, 2018 - ACS Publications
Heterojunction based on two-dimensional (2D) layered materials is an emerging topic in the
field of nanoelectronics and optoelectronics. Here, molybdenum sulfide (MoS2)-based …