An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The first book to deal with the design and optimization of transistors made from strained
layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct …

Scaling has been the principal driving force behind the successful technology innovations of
the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction …

The implementation of a complete RF transceiver system on a single silicon chip is
motivated by a rapidly emerging wireless communication market which extends to consumer …

Advanced epitaxial growth of strained SiGe into a Si substrate enhances the freedom for
designing high speed bipolar transistors. Devices can be designed by altering the Ge …

Advances in silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies
resulted in an impressive increase in high-frequency performance during the last decade …

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures
application space. To date virtually every major player in the communications electronics …

A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned
stacked metal/IDP (SMI) electrodes is proposed. The SiGe-base structure, self-aligned to the …

The current research and development activities in silicon radio-frequency (RF)
technologies are first reviewed, accompanied by an illustration of the most pronounced …

In the last few years Si/SiGe/Si heterostructures grown by molecular beam epitaxy (MBE)
with its high precision and reproducibility have been used to build high-frequency and low …