Preparation of atomically clean surfaces of selected elements: A review

RG Musket, W McLean, CA Colmenares… - Applications of Surface …, 1982 - Elsevier
Surface cleaning procedures for seventy four of the elements having vapor pressures below
1.3× 10− 7 Pa at room temperature have been reviewed and evaluated. The emphasis was …

[图书][B] Solid surface physics

J Hölzl, FK Schulte, H Wagner - 2006 - books.google.com
The work function (WF) of a metal can be defined as the minimum energy required to extract
one electron from a metal. Obviously the WF is one of the fundamental electronic properties …

Tunneling microscopy of Ge (001)

JA Kubby, JE Griffith, RS Becker, JS Vickers - Physical Review B, 1987 - APS
The closely related geometric and electronic structure of the Ge (001) surface have been
investigated with the tunneling microscope. An asymmetric dimer reconstruction is observed …

Pinning and roughening of one-dimensional models of interfaces and steps

ST Chui, JD Weeks - Physical Review B, 1981 - APS
We show that an external pinning potential located along a single row will at all
temperatures localize the interface in a one-dimensional solid-on-solid model unless the …

Physical and chemical properties of stepped surfaces

H Wagner - Solid Surface Physics, 2006 - Springer
Within the last two decades, fundamental research on solid surfaces has been mainly
concerned with polycrystalline films and low index planes of single crystals, their physical …

Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si (111) by HF solutions

HE Hessel, A Feltz, M Reiter, U Memmert… - Chemical physics …, 1991 - Elsevier
Scanning-tunneling microscopy observation of atomic structures reveals strongly anisotropic
rates for etching of Si (111) surfaces in weakly alkaline HF solutions and negligible etch …

Leed studies of vicinal surfaces of silicon

BZ Olshanetsky, AA Shklyaev - Surface Science, 1979 - Elsevier
Clean silicon surfaces inclined at small angles to (111),(100) and (110) planes were
investigated by LEED. Surfaces oriented at low angles to the (111) plane contain steps with …

Atomic structure of Si and Ge surfaces: Models for (113),(115), and stepped (001) vicinal surfaces

W Ranke - Physical Review B, 1990 - APS
A new class of structure models for the (113) and (115) orientations of Si and Ge is
proposed. They are based on dimer and adatom formation as the main building blocks for …

On the influence of surface reconstruction on crystal growth processes

LJ Giling, WJP Van Enckevort - Surface Science, 1985 - Elsevier
Application of the morphologic Periodic Bond Chain method to diamond-like crystal
structures learns that {001} faces should be K or S type, ie they will be atomically rough. This …

Suppression of antiphase domains in the growth of GaAs on Ge (100) by molecular beam epitaxy

PR Pukite, PI Cohen - Journal of Crystal Growth, 1987 - Elsevier
We have used reflection high energy electron diffraction (RHEED) to determine the step
structure on Ge and GaAs surfaces. The results show the key role that inequivalent steps on …