We report the observation, through Shubnikov-de Haas oscillations in the
magnetoresistance, of spin splitting caused by the Rashba spin-orbit interaction in a strained …

The anisotropic nature of carrier mobility in simple cubic crystalline semiconductors, such as
technologically important silicon and germanium, is well understood as a consequence of …

Spin–orbit interaction effects are of great interest, primarily for the ability to modulate spin
transport in a semiconductor channel for device applications. In particular, the Rashba spin …

The complex quantum transport of a strained Ge quantum well (QW) modulation doped
heterostructure with two types of mobile carriers has been observed. The two dimensional …

The Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas of holes in
quantum wells consisting of pure germanium and silicon with low germanium content (13%) …

The Dresselhaus spin-orbit interaction is expected to perturb the quantum spin Hall phase
predicted to arise within InAs/GaSb coupled quantum wells. To gain a greater understanding …

In this paper, we demonstrate why cubic Rashba spin splitting is observed within inverted
doped strained germanium (sGe) hetrostructures. Magnetotransport measurements showed …

InAs/GaSb coupled quantum well heterostructures are important semiconductor systems
with applications ranging from spintronics to photonics. Most recently, InAs/GaSb …

The magneto-quantum and quantum interference effects in a two-dimensional gas of p-type
charge carriers are studied for three quantum wells made of practically pure germanium in a …

The interaction of surface acoustic waves (SAWs) with p-type Si∕ Si 0.87 Ge 0.13
heterostructures has been studied for SAW frequencies of 30–300 MHz. For temperatures in …