In this paper, we perform a theoretical study on the performance metrics of the lightly doped
drain and source (LDD) of double-material-gate graphene nanoribbon field effect transistors …

This paper presents an analytical 1/f noise model of fully overlapped lightly doped drain
MOSFET incorporating the voltage drop in the n/sup-/region due to the parasitic resistance …

An analytical model to determine the intrinsic drain-source series resistance of a fully
overlapped lightly doped drain (FOLD) MOSFET is presented. Considering outer and inner …

通过求解沟道的二维泊松方程得到沟道表面势和沟道反型层电荷, 建立了高k
栅介质小尺寸绝缘体上锗(GeOI) p 型金属氧化物半导体场效应晶体管(PMOSFET) …

A simple semi-empirical model for small geometry (short and narrow) lightly doped drain
MOSFET is developed and the expressions for threshold voltage, drain current …

A model for generation–recombination (g–r) noise in FOLD MOSFETs is presented
incorporating the field dependent mobility and the bias dependent series resistance. The g–r …

Considering the voltage drop in the n region due to the parasitic resistances, 1/f noise of the
fully overlapped lightly doped drain (FOLD) has been studied and it is observed that FOLD …

An analytical 1/f noise model based on the evaluation of channel charge in small geometry
Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel …

An analytical model for electrical characteristics of short geometry LDD and short channel FOLD
MOSFETs Page 1 PROC. 22nd INTERNATIONAL CONFERENCE ON MICROELECTRONICS …