[HTML][HTML] Quantum confinement in Si and Ge nanostructures: Theory and experiment
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
Heat treatment assisted-spin coating for LiNbO3 films preparation: their physical properties
Lithium Niobate thin films LN (LiNbO 3) were prepared on a Si substrate using heat-assisted-
spin coating method. A halogen lamp was used as a heating source during the deposition …
spin coating method. A halogen lamp was used as a heating source during the deposition …
Synthesis and characterization of nanostructured LiNbO3 films with variation of stirring duration
This paper focused on the effect of sol–gel stirring duration on the properties nanostructured
lithium niobate (LiNbO 3) films grown by sol–gel method. Nanostructured LiNbO 3 film was …
lithium niobate (LiNbO 3) films grown by sol–gel method. Nanostructured LiNbO 3 film was …
Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector
SS Lv, YY Liu, WY Tang, L He, XX Li… - Nuclear Science and …, 2021 - Springer
The point-contact high-purity germanium detector (HPGe) has the advantages of low
background, low energy threshold, and high energy resolution and can be applied in the …
background, low energy threshold, and high energy resolution and can be applied in the …
Effects of surface passivation by hydrogen on the structural and electronic properties of a germanium nanowire: A sp3 tight binding study
D Dass - Applied Surface Science, 2019 - Elsevier
The surface passivation is an important technique that suppresses the effects of surface
dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …
dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …
Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method
The nanoscale engineering of silicon can significantly change its bulk optoelectronic
properties to make it more favorable for device integration. Phonon process engineering is …
properties to make it more favorable for device integration. Phonon process engineering is …
[PDF][PDF] Experiments towards size and dopant control of germanium quantum dots for solar applications.
BL Oliva-Chatelain, AR Barron - AIMS Materials Science, 2015 - repository.rice.edu
Experiments towards size and dopant control of germanium quantum dots for solar applications
Page 1 AIMS Materials Science, 3(1): 1-21. DOI: 10.3934/matersci.2016.1.1 Received: 23 …
Page 1 AIMS Materials Science, 3(1): 1-21. DOI: 10.3934/matersci.2016.1.1 Received: 23 …
Effects of morphology on the electronic properties of hydrogenated silicon carbide nanowires
Article Preview Article Preview Article Preview The effects on the electronic band structure of
hydrogenated cubic silicon carbide (-SiC) nanowires of changes in the diameter and …
hydrogenated cubic silicon carbide (-SiC) nanowires of changes in the diameter and …
Coordination imperfection enhanced electron–phonon interaction and band-gap expansion in Si and Ge nanocrystals
Correlation between the size-enlarged Stokes shift and band-gap expansion of Si and Ge
nanocrystals has been investigated in terms of the bond order–length–strength correlation. It …
nanocrystals has been investigated in terms of the bond order–length–strength correlation. It …
[PDF][PDF] Effect of size and shape on static Refractive Index, Dielectric constant and Band gap of Nano solids
GR Patel, TC Pandya - Physics and Applied Sciences, 2018 - pdfs.semanticscholar.org
Revised 10/Jan/2018, Accepted 21/Feb/2018, Online 28/Feb/2018 Abstract—In the present
study, a simple theoretical model has been proposed for computation of optical properties …
study, a simple theoretical model has been proposed for computation of optical properties …