Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

In this study, single crystal ZnO microwires (MW) with size of∼ 5.4 mm× 30 μm are prepared
through a chemical vapor deposition technique at high temperature (1200° C) …

Optoelectronic devices with unconventional form factors, such as flexible and stretchable
light-emitting or photoresponsive devices, are core elements for the next-generation human …

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal.
Nanowires enable the local integration of high-quality III-V material, but advanced devices …

Growing high-quality core-shell heterostructure nanowires is still challenging due to the
lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the …

Inspired by nanoscience and nanoengineering, numerous nanostructured materials
developed by multidisciplinary approaches exhibit excellent photoelectronic properties …

Infrared photodetectors (IRPDs) have become important devices in various applications
such as night vision, military missile tracking, medical imaging, industry defect imaging …

High-performance solar-blind (200–280 nm) avalanche photodetectors (APDs) were
fabricated based on highly crystallized ZnO–Ga2O3 core–shell microwires. The responsivity …

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have
been widely reported because they are promising as an alternative for high-performance …