Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

Motivated by the growing demand to integrate functional oxides with dissimilar materials,
numerous studies have been undertaken to detach a functional oxide film from its original …

The economic health of the semiconductor industry requires substantial scaling of chip
power, performance, and area with every new technology node that is ramped into …

Provided herein are methods and apparatuses for filling features metal-containing materials.
One aspect of the dis closure relates to a method for filling structures with a metal-containing …

Metal alloys are usually fabricated by melting constituent metals together or sintering metal
alloy particles made by high energy ball milling (mechanical alloying). All these methods …

In this paper, we introduce a new Co precursor for the atomic layer deposition (ALD) of Co
metal and other Co containing materials. CoCl2 (TMEDA)(TMEDA= N, N, N′, N …

Intermetallics form a versatile group of materials that possess unique properties ranging
from superconductivity to giant magnetoresistance. The intermetallic Co–Sn and Ni–Sn …

As the design rule of the integrated circuits is decreasing to a 10 nm scale, the total electrical
resistance of conventional Cu metallization increases rapidly. New conducting materials …

Thin films and coatings based on Group 6 metal tungsten (W) have garnered intense interest
for applications including catalysis, lubrication, and solar energy. Due to its selectivity and …

In this study, we successfully fabricated low-resistivity and high-density molybdenum
carbonitride (MoCN) films through plasma-enhanced atomic layer deposition (PEALD) at …