[HTML][HTML] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov… - Nanoscale, 2015 - pubs.rsc.org
We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …

A survey of carbon nanotube interconnects for energy efficient integrated circuits

A Todri-Sanial, R Ramos, H Okuno… - IEEE Circuits and …, 2017 - ieeexplore.ieee.org
This article is a review of the state-of-art carbon nanotube interconnects for Silicon
application with respect to the recent literature. Amongst all the research on carbon …

Towards an optimal contact metal for CNTFETs

A Fediai, DA Ryndyk, G Seifert, S Mothes, M Claus… - Nanoscale, 2016 - pubs.rsc.org
Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect
transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as …

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

Y Zhang, Y Yang, T Yang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Carbon nanotube field-effect transistor (CNTFET) shows great potential for digital and
analog applications due to the unique 1-D ballistic carrier transport in carbon nanotubes …

Electron transport in extended carbon-nanotube/metal contacts: Ab initio based Green function method

A Fediai, DA Ryndyk, G Cuniberti - Physical Review B, 2015 - APS
We have developed a new method that is able to predict the electrical properties of the
source and drain contacts in realistic carbon nanotube field effect transistors (CNTFETs). It is …

Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab initio study

A Fediai, DA Ryndyk, G Seifert, S Mothes… - Applied Physics …, 2016 - pubs.aip.org
Using a dedicated combination of the non-equilibrium Green function formalism and large-
scale density functional theory calculations, we investigated how incomplete metal coverage …

Investigating the effect of some parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor

N Valed Karimi, Y Pourasad - International Nano Letters, 2016 - Springer
This paper studies pin tunneling carbon nanotube field-effect transistor to investigate the
effect of various parameters of the channel on the characteristics of tunneling carbon …

Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects

HS Kim, GI Lee, HS Kim, JK Kang, YH Kim - MRS Communications, 2012 - cambridge.org
Applying a first-principles computational approach, we study the electronic and charge
transport properties of the interfaces between metals and capped carbon nanotubes (CNTs) …

Tunneling carbon nanotube field effect transistor with asymmetric graded double halo doping in channel: Asym-GDH-T-CNTFET

NV Karimi, Y Pourasad - Procedia Materials Science, 2015 - Elsevier
A tunneling carbon nanotube field effect transistor with asymmetric graded double halo
(asym-GDH-T-CNTFET) is investigated in order to enhance band to band tunneling and …

[PDF][PDF] A Review Article on Carbon Nanotube Field Effect Transistors Technology

N Dhurandhar, P Dwivedi - CSVTU Res. J. Eng. Technol, 2019 - academia.edu
As Silicon industry is evolving it is scaling down day by day. With the reduced size of the
transistor, the craving for high performance devices has also taken place. For MOSFET, with …