[图书][B] Infrared and terahertz detectors

A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Spiral phase contrast imaging in nonlinear optics: seeing phase objects using invisible illumination

X Qiu, F Li, W Zhang, Z Zhu, L Chen - Optica, 2018 - opg.optica.org
Spiral phase contrast (SPC) imaging offers a vital, convenient tool for edge detection in
image processing. Despite significant experimental and theoretical progress in this area …

Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories

S Fang, R Hao, L Zhang, J Guo, W Liu - Frontiers in Physics, 2022 - frontiersin.org
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials
for infrared detection due to their excellent photoelectric properties and flexible and …

Frequency upconversion detection of rotational Doppler effect

H Guo, X Qiu, S Qiu, L Hong, F Lin, Y Ren… - Photonics …, 2021 - opg.optica.org
We demonstrated an efficient scheme of measuring the angular velocity of a rotating object
with the detection light working at the infrared regime. Our method benefits from the …

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

AV Voitsekhovskii, SN Nesmelov… - Journal of Physics D …, 2019 - iopscience.iop.org
We present the results of the study of the dark current in the MWIR nBn structure based on n-
Hg 1− x Cd x Te grown by molecular beam epitaxy on a GaAs (0 1 3) substrate. The CdTe …

Electronic structure modeling of InAs/GaSb superlattices with hybrid density functional theory

T Garwood, NA Modine, S Krishna - Infrared Physics & Technology, 2017 - Elsevier
The application of first-principles calculations holds promise for greatly improving our
understanding of semiconductor superlattices. Developing a procedure to accurately predict …

Temperature dependent growth of InAs/InAsSb superlattices by molecular beam epitaxy for HOT mid-wavelength infrared detectors

B Liu, L Zhu, Y Liu, L Lu, R Gong, H An, D Zhang… - Materials Science in …, 2023 - Elsevier
Abstract High-quality InAs/InAs 1-x Sb x type-II superlattices (T2SLs) were grown on GaSb
substrates by molecular beam epitaxy for high operating temperature (HOT) mid-wave …

Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors

R Taalat, JB Rodriguez, M Delmas… - Journal of Physics D …, 2013 - iopscience.iop.org
In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared
photodiodes with different periods were investigated. Three devices with different SL …

[HTML][HTML] Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

R Alchaar, JB Rodriguez, L Höglund, S Naureen… - AIP Advances, 2019 - pubs.aip.org
In this paper, structural, optical and electrical characterizations of longwave infrared barrier
detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated …

Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for mid-wavelength infrared photodetectors

H Zhu, Y Chen, Y Zhao, X Li, Y Teng, X Hao… - Superlattices and …, 2020 - Elsevier
Abstract InGaAs/InAsSb superlattices (SLs) were grown on InAs substrates by metal-organic
chemical vapor deposition (MOCVD) for potential applications in mid-wavelength infrared …