A review of NBTI mechanisms and models
S Mahapatra, N Parihar - Microelectronics Reliability, 2018 - Elsevier
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
A comparative study of different physics-based NBTI models
Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …
the literature are reviewed, and the predictive capability of these models is benchmarked …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery
Reaction-Diffusion (RD) framework for interface trap generation along with hole trapping in
pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature …
pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Understand NBTI mechanism by developing novel measurement techniques
MF Li, D Huang, C Shen, T Yang… - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
Our recent investigations and understanding of the negative bias temperature instability
(NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The …
(NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The …
Reassessing the mechanisms of negative-bias temperature instability by repetitive stress/relaxation experiments
DS Ang, ZQ Teo, TJJ Ho, CM Ng - IEEE Transactions on Device …, 2010 - ieeexplore.ieee.org
A major intrinsic limitation of the reaction-diffusion (RD) model for negative-bias temperature
instability (NBTI) is revealed through dynamic stress experiments. We found no evidence of …
instability (NBTI) is revealed through dynamic stress experiments. We found no evidence of …
Odyssey of the charge pumping technique and its applications from micrometric-to atomic-scale era
B Djezzar - Journal of Applied Physics, 2023 - pubs.aip.org
This paper reviews the evolution of the charge pumping (CP) technique and its applications
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trapping in pre-existing, process related gate insulator …
interface trap generation and hole trapping in pre-existing, process related gate insulator …
Characterization methods for BTI degradation and associated gate insulator defects
In this chapter, different characterization methods are discussed to determine BTI
degradation of MOSFET parameters and to directly estimate the pre-existing and generated …
degradation of MOSFET parameters and to directly estimate the pre-existing and generated …