Resolution of HEMT sensors needs to be improved to make feasible the precise detection of
antigens from body fluids like saliva instead of blood. For enhancing sensitivity and long …

This paper presents the applicability of a high-resolution AlGaN/AlN/GaN metal oxide
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …

Presented through this work is a steady state analytical model of the GaN HEMT based gas
detector. GaN with high chemical and thermal stability provides promises for detectors in …

This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …

This work reports the fabrication, characterization and testing for pH sensitivity of dielectric
modulated MOS-HEMT (Metal oxide semiconductorhigh electron mobility transistor) devices …

This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT)
based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and …

C-MOSHEMT (Circular-Metal Oxide Semiconductor High Electron Mobility Transistor) has
been modeled, fabricated and sensitivity analysis has been done for pH detection …

This work presents comprehensive analysis of a A l_xGa_(1-x) N/GaN High Electron Mobility
Transistor (HEMT) biosensor for variation in A l_xGa_(1-x) N layer alloy composition, bulk …

The multi-gate field effect transistors (FETs) offer significant merits in comparison with
conventional devices such as less switching power, compatibility with current manufacturing …

AlGaN/AIN/GaN based conventional and recessed gate high electron mobility transistors
(HEMTs) having Al 2 O 3 gate oxide have been investigated for comprehensive …