Analytical modeling and simulation-based investigation of AlGaN/AlN/GaN Bio-HEMT sensor for C-erbB-2 detection
A Varghese, C Periasamy, L Bhargava - IEEE Sensors Journal, 2018 - ieeexplore.ieee.org
Resolution of HEMT sensors needs to be improved to make feasible the precise detection of
antigens from body fluids like saliva instead of blood. For enhancing sensitivity and long …
antigens from body fluids like saliva instead of blood. For enhancing sensitivity and long …
Fabrication and charge deduction based sensitivity analysis of GaN MOS-HEMT device for glucose, MIG, C-erbB-2, KIM-1, and PSA detection
A Varghese, C Periasamy… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper presents the applicability of a high-resolution AlGaN/AlN/GaN metal oxide
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …
Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT-based hydrogen gas detector with low detection limit
A Varghese, A Eblabla, K Elgaid - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
Presented through this work is a steady state analytical model of the GaN HEMT based gas
detector. GaN with high chemical and thermal stability provides promises for detectors in …
detector. GaN with high chemical and thermal stability provides promises for detectors in …
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: a simulation study
This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
Fabrication and pH-sensitivity analysis of MOS-HEMT dimensional variants for bio-sensing applications
A Varghese, P Chinnamuthan… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This work reports the fabrication, characterization and testing for pH sensitivity of dielectric
modulated MOS-HEMT (Metal oxide semiconductorhigh electron mobility transistor) devices …
modulated MOS-HEMT (Metal oxide semiconductorhigh electron mobility transistor) devices …
GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity
A Varghese, A Eblabla, Z Wu, SU Ghozati… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT)
based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and …
based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and …
Fabrication and modeling-based performance analysis of circular GaN MOSHEMT-based electrochemical sensors
A Varghese, C Periasamy, L Bhargava… - IEEE Sensors …, 2020 - ieeexplore.ieee.org
C-MOSHEMT (Circular-Metal Oxide Semiconductor High Electron Mobility Transistor) has
been modeled, fabricated and sensitivity analysis has been done for pH detection …
been modeled, fabricated and sensitivity analysis has been done for pH detection …
Sensitivity Analysis of HEMT Biosensor for Variation in Alx Ga1-xN Layer Alloy Composition, Bulk Trap and Doping
SS Kanrar, A De, SK Sarkar - 2024 IEEE 3rd International …, 2024 - ieeexplore.ieee.org
This work presents comprehensive analysis of a A l_xGa_(1-x) N/GaN High Electron Mobility
Transistor (HEMT) biosensor for variation in A l_xGa_(1-x) N layer alloy composition, bulk …
Transistor (HEMT) biosensor for variation in A l_xGa_(1-x) N layer alloy composition, bulk …
Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)
The multi-gate field effect transistors (FETs) offer significant merits in comparison with
conventional devices such as less switching power, compatibility with current manufacturing …
conventional devices such as less switching power, compatibility with current manufacturing …
AlGaN/GaN HEMT AC/DC Performance Analysis of Conventional and Gate Recessed MOS-HEMT With Temperature Variation
AlGaN/AIN/GaN based conventional and recessed gate high electron mobility transistors
(HEMTs) having Al 2 O 3 gate oxide have been investigated for comprehensive …
(HEMTs) having Al 2 O 3 gate oxide have been investigated for comprehensive …