Organic and hybrid resistive switching materials and devices

S Gao, X Yi, J Shang, G Liu, RW Li - Chemical Society Reviews, 2019 - pubs.rsc.org
The explosive increase in digital communications in the Big Data and internet of Things era
spurs the development of universal memory that can run at high speed with high-density and …

Nonvolatile memories based on graphene and related 2D materials

S Bertolazzi, P Bondavalli, S Roche, T San… - Advanced …, 2019 - Wiley Online Library
The pervasiveness of information technologies is generating an impressive amount of data,
which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads …

Flexible transparent high‐efficiency photoelectric perovskite resistive switching memory

X Liu, S Ren, Z Li, J Guo, S Yi, Z Yang… - Advanced Functional …, 2022 - Wiley Online Library
Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐
generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF …

Graphene and related materials for resistive random access memories

F Hui, E Grustan‐Gutierrez, S Long… - Advanced Electronic …, 2017 - Wiley Online Library
Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

A mini review of neuromorphic architectures and implementations

RA Nawrocki, RM Voyles… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Neuromorphic architectures are hardware systems that aim to use the principles of neural
function for their basis of operation. Their goal is to harness biologically inspired concepts …

Nanoionics‐enabled memristive devices: strategies and materials for neuromorphic applications

Z Wang, L Wang, M Nagai, L Xie, M Yi… - Advanced Electronic …, 2017 - Wiley Online Library
Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials

Y Li, S Long, Q Liu, H Lv, M Liu - Small, 2017 - Wiley Online Library
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

2D layered materials for memristive and neuromorphic applications

CY Wang, C Wang, F Meng, P Wang… - Advanced Electronic …, 2020 - Wiley Online Library
With many fantastic properties, memristive devices are a top candidate for next‐generation
memory and neuromorphic computing chips. Significant research progress has been made …

Recent developments and perspectives for memristive devices based on metal oxide nanowires

G Milano, S Porro, I Valov… - Advanced Electronic …, 2019 - Wiley Online Library
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

A Review of Graphene‐Based Memristive Neuromorphic Devices and Circuits

B Walters, MV Jacob, A Amirsoleimani… - Advanced Intelligent …, 2023 - Wiley Online Library
As data processing volume increases, the limitations of traditional computers and the need
for more efficient computing methods become evident. Neuromorphic computing mimics the …