Our understanding of defects in materials science has changed tremendously over the last
century. While 100 years ago they were often ignored by scientists, nowadays they are in the …

A detailed understanding of the relation between microscopic structure and phonon
propagation at the nanoscale is essential to design materials with desired phononic and …

Self-diffusion in silicon and the contribution of vacancies and self-interstitials have been
controversially discussed for 50 yr. Most recent results show that the intrinsic silicon self …

Electrical and thermal transport properties of disordered materials have long been of both
theoretical interest and engineering importance. As a new class of materials with an intrinsic …

For the development of photonic integrated circuits, it is mandatory to implement light
sources on a Si-on-insulator (SOI) platform. However, point defects in the Si matrix and, eg …

Nonepitaxial multilayer silicene with a lonsdaleite structure was synthesized from a 4H-SiC
substrate using an implantation-assisted process. An sp3-like bonding signal was fitted in a …

Neutron and γ-ray irradiation damages to transistors are found to be non-additive, and this is
denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The …

The optical properties of GeO [SiO] and GeO [SiO 2] solid alloy films grown on Si (001)
substrates were studied using Raman, Fourier transform infrared absorption (FTIR) and …

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

We report on the effect of electron and proton irradiation on effective minority carrier lifetimes
(τ eff) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave …