Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz
This work demonstrates the high-frequency and high-power performance capacity of GaN
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …
Giant photoelectric energy conversion via a 3C-SiC Nano-Thin film double heterojunction
Enhancing the energy conversion efficiency is utmost important in renewable energy and
self-powered optoelectronic sensing applications. In this study, we propose the concept of a …
self-powered optoelectronic sensing applications. In this study, we propose the concept of a …
InAlN/GaN HEMTs on Si With High of 250 GHz
In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm
rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si …
rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si …
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance
We report on Al (Ga, In) N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si
wafers using Au-free processing in standard Si CMOS tools, and discuss the performance …
wafers using Au-free processing in standard Si CMOS tools, and discuss the performance …
Process of Au-free source/drain ohmic contact to AlGaN/GaN HEMT
LQ Zhang, XL Wu, WQ Miao, ZY Wu, Q Xing, PF Wang - Crystals, 2022 - mdpi.com
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising
candidates for a 5G communication system, which demands higher frequency and power …
candidates for a 5G communication system, which demands higher frequency and power …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
Self-heating and equivalent channel temperature in short gate length GaN HEMTs
In this paper, we study the self-heating mechanism and its impact on electrical performance
of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal …
of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal …
Power electronics with wide bandgap materials: Toward greener, more efficient technologies
F Iacopi, M Van Hove, M Charles, K Endo - Mrs Bulletin, 2015 - cambridge.org
Greener technologies for more efficient power generation, distribution, and delivery in
sectors ranging from transportation and generic energy supply to telecommunications are …
sectors ranging from transportation and generic energy supply to telecommunications are …
High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg
We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …