Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent …
Potential applications of bulk GaN and AlN crystals have made possible single and
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …
III-nitride short period superlattices for deep UV light emitters
SA Nikishin - Applied Sciences, 2018 - mdpi.com
Featured Application Advanced infrared, visible, and ultraviolet light emitters. Abstract III-
Nitride short period superlattices (SPSLs), whose period does not exceed~ 2 nm (~ 8 …
Nitride short period superlattices (SPSLs), whose period does not exceed~ 2 nm (~ 8 …
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN
high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well …
high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well …
Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
A new approach is described that is applicable for structural characterization of any
heteroepitaxially grown (strained or relaxed) III-nitride superlattices (SLs). The proposed …
heteroepitaxially grown (strained or relaxed) III-nitride superlattices (SLs). The proposed …
Strain-compensated InGaAsP superlattices for defect reduction of InP grown on exact-oriented (001) patterned Si substrates by metal organic chemical vapor …
We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique
to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal …
to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal …
Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers
Plastic strain relaxation in epitaxial layers is one of the crucial factors that limits the
performance of III-nitride-based heterostructures. In this work, we report on strain relaxation …
performance of III-nitride-based heterostructures. In this work, we report on strain relaxation …
Dominant influence of interface roughness scattering on the performance of GaN terahertz quantum cascade lasers
Abstract Effect of interface roughness of quantum wells, non-intentional doping, and alloy
disorder on performance of GaN-based terahertz quantum cascade lasers (QCL) has been …
disorder on performance of GaN-based terahertz quantum cascade lasers (QCL) has been …
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
We report on Al x Ga1–x N heterostructures resulting from the coherent growth of a positive
then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These …
then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These …
Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction
Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of
symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by …
symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by …
Arrangement of GaN nanowires on Si (001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer
X-ray diffraction measurements with the use of both laboratory and synchrotron X-ray
sources and transmission electron microscopy have been applied to study two types of GaN …
sources and transmission electron microscopy have been applied to study two types of GaN …