Defect states in the high-dielectric-constant gate oxide LaAlO3
K Xiong, J Robertson, SJ Clark - Applied physics letters, 2006 - pubs.aip.org
We present calculations of the energy levels of the oxygen vacancy, Al La antisite, and
oxygen interstitial defects in La Al O 3 using density functional methods that do not need an …
oxygen interstitial defects in La Al O 3 using density functional methods that do not need an …
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-
diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond …
diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond …
Investigation of LaAlO3 pervoskite compound for optoelectronic and thermoelectric devices under pressure
The electronic, optical and thermoelectric properties of LaAlO 3 are studied under different
pressure ranges (0–40 GPa) by using the full potential linear augmented plane wave …
pressure ranges (0–40 GPa) by using the full potential linear augmented plane wave …
Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing
We fabricated Al 2 O 3/LaAlO 3/SiO 2 (ALS) gate stacks on 4H-SiC, with LaAlO 3 (LAO) film
being annealed in O 2 atmosphere. The ALS gate stack annealed at 700° C exhibits a much …
being annealed in O 2 atmosphere. The ALS gate stack annealed at 700° C exhibits a much …
Development of high-κ HoTiO3 sensing membrane for pH detection and glucose biosensing
TM Pan, MD Huang, CW Lin, MH Wu - Sensors and Actuators B: Chemical, 2010 - Elsevier
In this paper, we proposed an electrolyte–insulator–semiconductor (EIS) device
incorporating a high-κ HoTiO3 sensing membrane deposited on Si substrates through co …
incorporating a high-κ HoTiO3 sensing membrane deposited on Si substrates through co …
Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon
Amorphous La Al O 3 thin films were deposited at room temperature directly on n-type and p-
type Si (001) by molecular beam deposition. The dielectric properties of the stoichiometric …
type Si (001) by molecular beam deposition. The dielectric properties of the stoichiometric …
Structural properties and sensing performance of high-k Sm2O3 membrane-based electrolyte–insulator–semiconductor for pH and urea detection
MH Wu, CH Cheng, CS Lai, TM Pan - Sensors and Actuators B: Chemical, 2009 - Elsevier
For high sensitive pH sensing, an electrolyte–insulator–semiconductor (EIS) device with a
samarium oxide (Sm2O3) sensing membrane fabricated by reactive sputtering and the …
samarium oxide (Sm2O3) sensing membrane fabricated by reactive sputtering and the …
Native point defects in : A hybrid functional study
We investigate the electronic structure of defects in LaAlO 3 (LAO) and their effects on
electronic properties of bulk and heterostructures. Our calculations indicate that vacancies …
electronic properties of bulk and heterostructures. Our calculations indicate that vacancies …
Hydrogen passivation of oxygen vacancies in LaAlO3
M Choi - Current Applied Physics, 2022 - Elsevier
Through first-principles calculation using the screened hybrid functional, we investigate the
energetics and electronic structure of substitutional hydrogen (HO) in which one hydrogen …
energetics and electronic structure of substitutional hydrogen (HO) in which one hydrogen …
Electronic defects in LaAlO3
K Xiong, J Robertson, SJ Clark - Microelectronic Engineering, 2008 - Elsevier
We present calculations of the energy levels of the oxygen vacancy, the AlLa antisite and the
oxygen interstitial defects in LaAlO3 using density functional methods that do not need an …
oxygen interstitial defects in LaAlO3 using density functional methods that do not need an …