Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs
N Giannopoulos, G Ioannidis, G Vokas… - Energies, 2023 - mdpi.com
Silicon carbide (SiC) MOSFETs tend to become one of the main switching elements in
power electronics applications of medium-and high-power density. Usually, SiC MOSFETs …
power electronics applications of medium-and high-power density. Usually, SiC MOSFETs …
[PDF][PDF] Compensating asymmetries of parallel-connected SiC MOSFETs using intelligent gate drivers
C Lüdecke - 2022 - researchgate.net
Compensating Asymmetries of Parallel-Connected SiC MOSFETs Using Intelligent Gate Drivers
Page 1 Aachener Beiträge des ISEA 0 100 200 300 400 500 20 40 60 Time in s T emp erature …
Page 1 Aachener Beiträge des ISEA 0 100 200 300 400 500 20 40 60 Time in s T emp erature …
Influencing factors and suppressing methods of current imbalance for parallel-connected SiC MOSFETs: A review
J Qiao, B Zhao, P Sun, Y Cai… - 2022 IEEE 5th …, 2022 - ieeexplore.ieee.org
Silicon carbide MOSFETs are often applied in parallel connection because of low monolithic
current level. However, current imbalance caused by parallel connection challenges the …
current level. However, current imbalance caused by parallel connection challenges the …
Power Board Design for Parallel SiC MOSFET Characterization
MG Spitaleri, G Scarcella, G Scelba… - … Congress & Expo …, 2024 - ieeexplore.ieee.org
The primary objective of this paper is to present the design of a power board specifically
developed to investigate the impact of parameters and layout mismatches of paralleled SiC …
developed to investigate the impact of parameters and layout mismatches of paralleled SiC …
Design and Current Balancing Optimization of A 1700V/1000A Multi-chip SiC Power Module
J Yang, Y Gan, L Wang, C Zhao… - 2023 11th International …, 2023 - ieeexplore.ieee.org
The rated current of a single SiC MOSFET is always less than 100A at a voltage rating
higher than 1.2 kV. Therefore, plenty of SiC MOSFET dies paralleled as multichip power …
higher than 1.2 kV. Therefore, plenty of SiC MOSFET dies paralleled as multichip power …