Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Electronic defects in amorphous oxide semiconductors: A review

K Ide, K Nomura, H Hosono… - physica status solidi (a), 2019 - Wiley Online Library
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

Oxide semiconductor thin‐film transistors: a review of recent advances

E Fortunato, P Barquinha, R Martins - Advanced materials, 2012 - Wiley Online Library
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

[HTML][HTML] Present status of amorphous In–Ga–Zn–O thin-film transistors

T Kamiya, K Nomura, H Hosono - Science and Technology of …, 2010 - Taylor & Francis
The present status and recent research results on amorphous oxide semiconductors (AOSs)
and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga …

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

X Duan, K Huang, J Feng, J Niu, H Qin… - … on Electron Devices, 2022 - ieeexplore.ieee.org
For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol–gel on chip'process

KK Banger, Y Yamashita, K Mori, RL Peterson… - Nature materials, 2011 - nature.com
At present there is no 'ideal'thin-film transistor technology for demanding display
applications, such as organic light-emitting diode displays, that allows combining the low …

Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

W Li, J Shi, KHL Zhang, JL MacManus-Driscoll - Materials Horizons, 2020 - pubs.rsc.org
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

J Troughton, D Atkinson - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

[PDF][PDF] Boost up mobility of solution‐processed metal oxide thin‐film transistors via confining structure on electron pathways

YS Rim, H Chen, X Kou, HS Duan, H Zhou… - Advanced …, 2014 - researchgate.net
DOI: 10.1002/adma. 201400529 high overlapping of unoccupied metal ns orbitals (n> 4)
with oxygen p-orbitals belonging p-block metals.[12, 13] The technology of solution …

Toward high-performance amorphous GIZO TFTs

P Barquinha, L Pereira, G Goncalves… - Journal of The …, 2008 - iopscience.iop.org
This work analyzes the role of processing parameters on the electrical performance of GIZO
films and thin-film transistors (TFTs). Parameters such as oxygen partial pressure, deposition …