Enhanced self-powered and visible-range photodetector performance of Ag2S nanostructures by Cu concentrations
N Tabrizi, F Jamali-Sheini, S Ebrahimiasl… - Sensors and Actuators A …, 2023 - Elsevier
In the present research, silver sulfide (Ag 2 S) nanostructures were grown using the
sonochemical method. The effect of copper (Cu) dopant in different concentrations was …
sonochemical method. The effect of copper (Cu) dopant in different concentrations was …
The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)
E Yükseltürk, S Bengi - Journal of Materials Science: Materials in …, 2023 - Springer
The frequency dependent electrical and dielectric properties of the Au/P3HT/n-Si metal-
polymer-semiconductor (MPS) type Schottky barrier diode (SBD) has been investigated …
polymer-semiconductor (MPS) type Schottky barrier diode (SBD) has been investigated …
Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe: PVA via the admittance method
In this work, to gain detailed information about the electrical characteristics, interface traps
(D it), and their lifetimes (τ) of the metal-polymer-semiconductor (MPS) type structures …
(D it), and their lifetimes (τ) of the metal-polymer-semiconductor (MPS) type structures …
A high sensitivity temperature coefficient of the Au/n-Si with (CdTe-PVA) structure based on capacitance/conductance-voltage (C/GV) measurements in a wide range …
This study focused on revealing the temperature-sensing performance and rudimental
electrical-properties of the Au/(CdTe-PVA)/n-Si depending on the temperature via …
electrical-properties of the Au/(CdTe-PVA)/n-Si depending on the temperature via …
Dielectric properties of diamond/SiC composite fabricated by Si vapor infiltration process
P Liu, Z Han, X He - Journal of the European Ceramic Society, 2024 - Elsevier
The dielectric properties and polarization mechanism are important for the application of
high thermal conductivity electronic packaging materials. In this work, diamond/SiC …
high thermal conductivity electronic packaging materials. In this work, diamond/SiC …
Investigation of the electrical properties of electrochemically grown DLC films doped with specific elements (S, N, Cu) in Schottky structures as interlayers
LM Balıkçı, İ Taşçıoğlu, M Ulusoy, AF Vahid… - Journal of Alloys and …, 2024 - Elsevier
This study examines the electrical and photoelectrical properties of diamond-like carbon
(DLC) films, both undoped and doped with specific elements (S, N, Cu), deposited on p-Si …
(DLC) films, both undoped and doped with specific elements (S, N, Cu), deposited on p-Si …
Multi-Gaussian distribution of barrier height in diamond-like carbon interfacial-layered Schottky devices
A Kaymaz - Materials Science in Semiconductor Processing, 2024 - Elsevier
Pieces of information about the physical and electronic properties of diamond-like carbon
(DLC) interfacial-layered Schottky devices are crucial because DLC is known for its …
(DLC) interfacial-layered Schottky devices are crucial because DLC is known for its …
The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices
EE Baydilli - Materials Science in Semiconductor Processing, 2024 - Elsevier
The objective of this study is to determine the temperature and voltage-dependent current
conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to …
conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to …
Effectuality of frequency dependent dielectric characterization of (N: DLC) film deposition between the metal-semiconductor interface
Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped
Diamond-Like Carbon (N: DLC) film-coated interlayer is performed to assess their dielectric …
Diamond-Like Carbon (N: DLC) film-coated interlayer is performed to assess their dielectric …
The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures
To determine the Al/(CMAT)/p-Si structure's admittance analysis, capacitance/conductance
versus frequency (C/GVf) data was obtained in the 3 kHz-3 MHz and− 2/4 V ranges at room …
versus frequency (C/GVf) data was obtained in the 3 kHz-3 MHz and− 2/4 V ranges at room …