Imperfections are not 0 K: free energy of point defects in crystals

I Mosquera-Lois, SR Kavanagh, J Klarbring… - Chemical Society …, 2023 - pubs.rsc.org
Defects determine many important properties and applications of materials, ranging from
doping in semiconductors, to conductivity in mixed ionic–electronic conductors used in …

Work function: Fundamentals, measurement, calculation, engineering, and applications

L Lin, R Jacobs, T Ma, D Chen, J Booske, D Morgan - Physical Review Applied, 2023 - APS
The work function, which is the energy barrier for an electron escaping from the surface of a
material, is a fundamental material surface property with many applications spanning energy …

Recent advances in the ab initio theory of solid-state defect qubits

Á Gali - Nanophotonics, 2023 - degruyter.com
Solid-state defects acting as single photon sources and quantum bits are leading
contenders in quantum technologies. Despite great efforts, not all the properties and …

A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

JC Thomas, W Chen, Y Xiong, BA Barker… - Nature …, 2024 - nature.com
Point defects in two-dimensional materials are of key interest for quantum information
science. However, the parameter space of possible defects is immense, making the …

Carbon defect qubit in two-dimensional WS2

S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali - Nature communications, 2022 - nature.com
Identifying and fabricating defect qubits in two-dimensional semiconductors are of great
interest in exploring candidates for quantum information and sensing applications. A …

The application of QM/MM simulations in heterogeneous catalysis

GA Bramley, OT Beynon, PV Stishenko… - Physical Chemistry …, 2023 - pubs.rsc.org
The QM/MM simulation method is provenly efficient for the simulation of biological systems,
where an interplay of extensive environment and delicate local interactions drives a process …

An L-band emitter with quantum memory in silicon

P Udvarhelyi, A Pershin, P Deák, A Gali - npj Computational Materials, 2022 - nature.com
Fluorescent centres in silicon have recently attracted great interest, owing to their
remarkable properties for quantum technology. Here, we demonstrate that the C-centre in …

Defect modeling and control in structurally and compositionally complex materials

X Zhang, J Kang, SH Wei - Nature Computational Science, 2023 - nature.com
Conventional computational approaches for modeling defects face difficulties when applied
to complex materials, mainly due to the vast configurational space of defects. In this …

Electronic Impurity Doping of a 2D Hybrid Lead Iodide Perovskite by and

H Lu, G Koknat, Y Yao, J Hao, X Qin, C Xiao, R Song… - PRX Energy, 2023 - APS
Control over conductivity and carrier type (electrons and holes) defines semiconductors. A
primary approach to target carrier concentrations involves introducing a small population of …

The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium

P Deák, P Udvarhelyi, G Thiering, A Gali - Nature Communications, 2023 - nature.com
Thermal equilibrium is reached when the system assumes its lowest energy. This can be
hindered by kinetic reasons; however, it is a general assumption that the ground state can …