Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics

JW Park, BH Kang, HJ Kim - Advanced Functional Materials, 2020 - Wiley Online Library
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack

MH Cho, CH Choi, HJ Seul, HC Cho… - ACS Applied Materials …, 2021 - ACS Publications
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …

Printable semiconductors for backplane TFTs of flexible OLED displays

H Zhu, ES Shin, A Liu, D Ji, Y Xu… - Advanced Functional …, 2020 - Wiley Online Library
Studies on printable semiconductors and technologies have increased rapidly over recent
decades, pioneering novel applications in many fields, such as energy, sensing, logic …

Overview of recent progress in electrohydrodynamic jet printing in practical printed electronics: Focus on the variety of printable materials for each component

H Kwon, J Hong, SY Nam, HH Choi, X Li… - Materials …, 2021 - pubs.rsc.org
Printed electronics will be essential in the implementation of next-generation electronic
devices, because printing facilitates fabrication of devices on various rigid, thin, or flexible …

Solution-processed metal-oxide thin-film transistors: A review of recent developments

R Chen, L Lan - Nanotechnology, 2019 - iopscience.iop.org
Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs)
based on metal-oxide (MO) semiconductors have drawn great attention during recent years …

High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition

MH Cho, CH Choi, MJ Kim, JS Hur, T Kim… - ACS Applied Materials …, 2023 - ACS Publications
An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single
dyad consists of a 2-nm-thick confinement layer (CL)(In0. 84Ga0. 16O or In0. 75Zn0. 25O) …

Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability

JK Saha, MM Billah, J Jang - ACS applied materials & interfaces, 2021 - ACS Publications
We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film
transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350° C on an …

Heterojunction oxide thin film transistors: a review of recent advances

J Lee, DS Chung - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
In the last decades, oxide thin-film transistors (TFTs) have been extensively developed for
optoelectronic applications owing to their outstanding electrical properties, such as excellent …

Multi-valued logic system: New opportunities from emerging materials and devices

H Yoo, CH Kim - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Multi-valued logic (MVL) is considered as a key enabler for next-generation and high-
information-density digital electronics. While the conventional approaches to MVL systems …