In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

Proton irradiation and subsequent rapid‐thermal annealing are used to create intermixing in
GaAs‐Al0. 54Ga0. 46As quantum wells of various thicknesses. Very large energy shifts (up …

The use of high energy proton implantation is demonstrated to precisely and independently
shift the energies of both exciton and photon components of GaAs microcavity exciton …

The technique of ion‐induced quantum‐well (QW) intermixing using broad area, high
energy (2–8 MeV As4+) ion implantation has been studied in a graded‐index separate …

InGaAs/GaAs/AlGaAs and InGaAs/InGaAsP/InP laser structures, with InGaAs quantum wells
approximately 1.85 μm beneath the surface, were implanted with ions having energies up to …

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD)
InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post …

Proton irradiation with subsequent rapid thermal annealing was used to investigate
intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence …

In1xGaxAs/InP and InAsyP1y/InP quantum well QW structures have been shown to be
potentially useful for optoelectronic devices, such as modulators and lasers used in optical …

Periodical spatial modulation of the excitonic resonance in a quantum well could lead to the
formation of a new highly directional and resonant coherent optical response—resonant …

Progress in the development of ion implantation enhanced quantum well shape modification
as a technique for monolithically integrating optoelectronic devices of varying functionalities …