Single-crystal silicon carbide (SiC) has been widely applied in the military and civil fields
because of its excellent physical and chemical properties. However, as is typical in hard-to …

The radiation hardness of silicon carbide with respect to electron and proton irradiation and
its dependence on the irradiation temperature are analyzed. It is shown that the main …

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics
to increase the detection efficiency although such SBDs manifest large diode ideality factors …

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-
semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the …

Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that
make it especially appropriate for radiation monitoring in radiation harsh environments and …

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-
processable electronics to be deployed in harsh environments. By utilizing a nanoscale form …

In this paper, the features of radiation compensation of wide-gap semiconductors are
discussed, considering the case study of silicon carbide. Two classical methods of …

We report the results of a study into the impact of irradiation with 0.9 MeV electrons on the
main properties of 4H-SiC MOSFETs of 1.2 kV class at irradiation doses Φ within the range …

The effect of high-temperature irradiation with 15 MeV protons on the parameters of high-
voltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23–500° C …