High thermal stability of tensile strained direct gap GeSn crystallized on amorphous layers

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GeSn on insulators (GeSnOI) toward mid-infrared integrated photonics

X Wang, A Cuervo Covian, L Je, S Fu, H Li, J Piao… - Frontiers in …, 2019 - frontiersin.org
In recent years, Ge and Ge1− xSnx materials and devices have achieved rapid progress in
integrated photonics. However, conventional heteroepitaxy of active photonic devices …
被引用次数：31 相关文章 所有 4 个版本

Sn Nanodots-Induced Composition Enhancement (NICE) to Achieve 26 at.% Sn in GeSn for Mid-Infrared Integrated Photonics

AVC Covian, Y Zhou, X Wang, SQ Yu, J Liu - ECS Transactions, 2019 - iopscience.iop.org
We present a nanodot-induced composition enhancement (NICE) approach for achieving
high Sn composition GeSn. The approach involves the deposition of Sn dots (20-60nm in …
被引用次数：1 相关文章