We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a
photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to …

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane
GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via …

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on
nonpolar GaN substrates, using a KOH/K 2 S 2 O 8 solution and illuminated by a Xe arc …

We demonstrate a vertical (< 1 departure) and smooth (2.0 nm root mean square line-edge
roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl 2 chemistry …

Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical
undercut etching - IOPscience Skip to content IOP Science home Accessibility Help Search …

Recently, III-nitride semiconductors have gained immense attention for application in high-
performance optoelectronic devices. However, in the device fabrication process, it is …

Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-
based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet …

Light emitting diodes (LEDs), with active blue and green emitting and sacrificial multi-
quantum well layers, were epitaxially grown using metal organic chemical vapor deposition …

We estimate the roughening‐induced scattering optical losses in III‐nitride current aperture
laser diodes (CA‐LDs) caused by imperfect photoelectrochemical (PEC) etching of the …

We applied a damage-free substrate removal technique using photoelectrochemical etching
(PECE) by incorporating sacrificial layer In 0.12 Ga 0.88 N single quantum well (SL-SQW) …