Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

In recent years synchrotron x-ray microprobes and nanoprobes have emerged as key
characterization tools with a remarkable impact for different scientific fields including solid …

CuO x nanowires were synthesized by a low-cost and large-scale electrochemical process
with AAO membranes at room temperature and its resistive switching has been …

A light incident angle selectivity of a memory device is demonstrated. As a model system, the
ZnO resistive switching device has been selected. Electrical signal is reversibly switched …

During the past two decades, one–dimensional (1D) metal–oxide nanowire (NW)-based
molecular sensors have been witnessed as promising candidates to electrically detect …

Electrically driven resistance change in metal oxides opens up an interdisciplinary research
field for next-generation non-volatile memory. Resistive switching exhibits an electrical …

Here we report the thermal management of oxide nanowire sensor in both spatial and time
domains by utilizing unique thermal properties of nanowires, which are (1) the reduced …

For realization of new informative systems, the memristor working like synapse has drawn
much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si …

Memristive devices based on electrochemical resistive switching effects have been
proposed as promising candidates for in-memory computing and for the realization of …