Mass transfer techniques for large-scale and high-density microLED arrays
Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties
and unique demands in next-generation displays. However, the small size of the microLED …
and unique demands in next-generation displays. However, the small size of the microLED …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
IAI Akasaki, HAH Amano - Japanese journal of applied physics, 1997 - iopscience.iop.org
Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of …
A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini - Physical Review B, 2001 - APS
A number of diverse bulk properties of the zinc-blende and wurtzite III-V nitrides AlN, GaN,
and InN, are predicted from first principles within density-functional theory using the plane …
and InN, are predicted from first principles within density-functional theory using the plane …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
[图书][B] Introduction to nitride semiconductor blue lasers and light emitting diodes
S Nakamura, SF Chichibu - 2000 - taylorfrancis.com
The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …
recognized for its development into a commercial lighting system using about a tenth of the …
Properties of strained wurtzite GaN and AlN: Ab initio studies
JM Wagner, F Bechstedt - Physical Review B, 2002 - APS
The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
Group III nitride semiconductors for short wavelength light-emitting devices
JW Orton, CT Foxon - Reports on progress in physics, 1998 - iopscience.iop.org
The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
First-principles study on electronic and elastic properties of BN, AlN, and GaN
K Shimada, T Sota, K Suzuki - Journal of applied physics, 1998 - pubs.aip.org
We have carried out first-principles total energy calculations to investigate electronic and
elastic properties of both zinc-blende and wurtzite BN, AlN, and GaN. We have calculated …
elastic properties of both zinc-blende and wurtzite BN, AlN, and GaN. We have calculated …