Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Reduction of thermal conductivity κ while preserving high electrical conductivity σ in
materials continues to be a vital goal in thermoelectric study for the reuse of exhaust heat …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots
(NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials …

The high electrical and drastically-low thermal conductivities, a vital goal for high
performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture …

We studied the effect of hydrogen plasma treatment on room-temperature
photoluminescence of self-assembled Ge/Si quantum dots by varying temperature and …

We have epitaxially grown Si∕ β-FeSi 2∕ Si (SFS) structures with β-FeSi 2 particles on Si
(001), and SFS structures with β-FeSi 2 continuous films on both Si (001) and Si (111) …

The properties of thin Si and SiGe layers grown on SiO 2 by chemical vapor deposition
(CVD) were studied using transmission electron and atomic force microscopies, and Raman …

High density of crystal defects is formed in Si layers during their growth on the
nanostructured surface composed of dense arrays of Ge islands grown on oxidized Si …

A Si-based nanomaterial is proposed for use as a thermoelectric material. Ultrasmall
epitaxial Ge nanodots (NDs) with an ultrahigh density are introduced into Si films as phonon …