Abstract The II-VI semiconductors ZnO and ZnSe have been investigated by x-ray and
ssbauer 67 spectroscopy at high external pressures. In ZnSe, the recoilfree fraction f …

Publisher Summary This chapter discusses structural transitions in the group IV, III–V, and II–
VI semiconductors under pressure. The most preferred technique of structural transitions is …

Most of the group IV, III-V, and II-VI compounds crystallize in semiconductor structures under
ambient conditions. Upon application of pressure, they undergo structural phase transitions …

Ensuring hydrostatic conditions in high pressure experiments is of utmost importance for
obtaining reproducible and comparable dataset. Here, we investigate the degree of …

A new technique incorporating a diamond anvil cell with photolithographic and film
deposition techniques has been developed for electrical resistivity measurement under high …

A pressure induced semiconductor-semimetal phase transition on tungsten diselenide has
been studied using in situ electrical resistivity measurement and first-principles calculation …

Abstract The ZnSe powder and Zn 0.84 Fe 0.16 Se crystal were studied by Raman scattering
spectroscopy at pressures up to 36.0 and 32.0 GPa, respectively. For ZnSe powder at 4.7 …

The high-pressure phase transition in ZnSe has been examined with full-potential linear
augmented plane wave and numerical atomic orbital band structure calculations within the …

The electronic structure of TiS 2 and its transport properties under high pressure have been
studied using first-principles calculation and in situ transport parameters measurement. Both …

The structural and electrical properties of ZnV2O6 under high pressure have been studied
using Raman spectroscopy, in situ angle dispersive X-ray diffraction (ADXRD), and …