Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …
interconnects as well as the modulation techniques allow the present day society to …
Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon
Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon
Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics
in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior …
in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior …
High Performance InAs//InP Quantum Dot 1.55 Tunnel Injection Laser
The characteristics of 1.55 μ\rmm InAs self-organized quantum-dot lasers, grown on (001)
InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the …
InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the …
Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55
We assess the influence of the degree of quantum confinement on the carrier recovery times
in semiconductor optical amplifiers (SOAs) through an experimental comparative study of …
in semiconductor optical amplifiers (SOAs) through an experimental comparative study of …
1.55-μm lasers epitaxially grown on silicon
We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for
photonics integration. To overcome the fundamental material challenges associated with …
photonics integration. To overcome the fundamental material challenges associated with …
InAs/InP quantum-dash lasers and amplifiers
JP Reithmaier, G Eisenstein… - Proceedings of the …, 2007 - ieeexplore.ieee.org
InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …
compound semiconductors lattice matched to InP substrates were used to realize long …
Lasing of wavelength-tunable (1.55 μm region) InAs∕ InGaAsP∕ InP (100) quantum dots grown by metal organic vapor-phase epitaxy
S Anantathanasarn, R Nötzel… - Applied Physics …, 2006 - pubs.aip.org
The authors report lasing of In As∕ In Ga As P∕ In P (100) quantum dots (QDs) wavelength
tuned into the 1.55 μ m telecom region. Wavelength control of the InAs QDs in an In Ga As …
tuned into the 1.55 μ m telecom region. Wavelength control of the InAs QDs in an In Ga As …
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
We study the electronic and optical properties of In As∕ In P quantum dots (QDs) on (100)
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
Electronic structure of self-assembled quantum dots: Comparison with self-assembled quantum dots
We investigate the electronic structure of the In As∕ In P quantum dots using an atomistic
pseudopotential method and compare it to that of the In As∕ Ga As quantum dots (QDs). We …
pseudopotential method and compare it to that of the In As∕ Ga As quantum dots (QDs). We …