Today there are several types of photodetectors that can cope with the task of detecting a
single photon, however, avalanche photodiodes are most widely used for applications in …

In this paper, we analyze superstructural transitions during epitaxial growth of two-
dimensional layers and the formation of quantum dots by the Stranski–Krastanov …

In this paper, we comprehensively consider the effect of the dependence of elastic strain on
the thickness of deposited material on the formation of two-dimensional layers and quantum …

Thin film deposition from the vapor phase is a complex process involving adatom
adsorption, movement, and incorporation into the growing film. Here, we present quantitative …

This paper presents the results of studying the processes of epitaxial growth of germanium
on silicon with crystallographic orientation (111) in a wide temperature range. The …

The atomic arrangements and electrical properties of SiGe nanomaterials are of significance
when used in novel nanoelectronic devices and optoelectronic devices. Atomic …

Thermal annealing temperature and time dictate the microstructure of semiconductor
materials such as silicon nanocrystals (Si NCs). Herein, atom probe tomography (APT) and …

Numerous theoretical and experimental studies show that during epitaxial growth according
to the Stranski-Krastanow mechanism in systems mismatched by the lattice constant, the …

The surface diffusion and intermixing of Ge ad‐atoms over Si (001) 2× 1 substrates using
classical molecular dynamics (CMD) simulations are characterized here. Several interatomic …

Защита состоится 24 ноября 2022 года в 14 ч. 30 мин. на заседании диссертационного
совета «НИ ТГУ. 1.3. 01» созданного на базе физического факультета и Сибирского …