A 22–30-GHz GaN low-noise amplifier with 0.4–1.1-dB noise figure
X Tong, S Zhang, P Zheng, Y Huang… - IEEE Microwave and …, 2019 - ieeexplore.ieee.org
A 22-30-GHz gallium nitride (GaN) low-noise amplifier (LNA) having a noise figure (NF) of
0.4-1.1 dB is presented in this letter. This LNA is fabricated with 0.1 gatelength GaN-on …
0.4-1.1 dB is presented in this letter. This LNA is fabricated with 0.1 gatelength GaN-on …
An 18–56-GHz wideband GaN low-noise amplifier with 2.2–4.4-dB noise figure
X Tong, L Zhang, P Zheng, S Zhang… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
An 18-56-GHz gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave
integrated circuit (MMIC) is presented in this letter. This LNA is fabricated with commercial …
integrated circuit (MMIC) is presented in this letter. This LNA is fabricated with commercial …
GaN single-chip transceiver frontend MMIC for X-band applications
S Masuda, M Yamada, Y Kamada… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
An X-band transceiver frontend monolithic microwave integrated circuit (MMIC) has been
successfully developed by using GaN HEMT technology. The MMIC contains a power …
successfully developed by using GaN HEMT technology. The MMIC contains a power …
Ultralow-Power Digital Control and Signal Conditioning in GaAs MMIC Core Chip for X-Band AESA Systems
This work presents the design and characterization of an ultralow-power core chip for
electronically scanned arrays at-band, implemented in 0.25-/0.5-E-/D-mode gallium …
electronically scanned arrays at-band, implemented in 0.25-/0.5-E-/D-mode gallium …
A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends
S D'Angelo, A Biondi, F Scappaviva… - … , Radar and Wireless …, 2016 - ieeexplore.ieee.org
A set of monolithic microwave integrated circuits (MMICs) has been successfully developed
by using a qualified European GaN HEMT technology. In particular a high power amplifier …
by using a qualified European GaN HEMT technology. In particular a high power amplifier …
A Ka-band scalable hybrid phased array based on four-element ICs
CY Chu, YP Chen, JZ Gao, CY Ke… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, a scalable hybrid phased-array system is presented through synchronization,
analog complex weighting, and digital beamforming of numerous fully integrated Ka-band …
analog complex weighting, and digital beamforming of numerous fully integrated Ka-band …
18–31 GHz GaN MMIC LNA using a 0.1 um T-gate HEMT process
X Tong, S Zhang, P Zheng, J Xu… - 2018 22nd International …, 2018 - ieeexplore.ieee.org
GaN technology has attracted main attention towards its application to high-power amplifier.
Most recently, noise performance of GaN device has also won acceptance. Compared with …
Most recently, noise performance of GaN device has also won acceptance. Compared with …
Compact GaN MMIC T/R module front-end for X-band pulsed radar
A Biondi, S D'Angelo, F Scappaviva… - 2016 11th European …, 2016 - ieeexplore.ieee.org
An X-band Single-Chip monolithic microwave integrated circuit (MMIC) has been developed
by using a European GaN HEMT technology. The very compact MMIC die occupying only an …
by using a European GaN HEMT technology. The very compact MMIC die occupying only an …
X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology
H Lee, HG Park, VD Le, VP Nguyen, JM Song, BH Lee… - Sensors, 2023 - mdpi.com
This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar
transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) …
transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) …
A broadband hybrid GaN cascode low noise amplifier for WiMax applications
AH Jarndal, AM Bassal - … of RF and Microwave Computer‐Aided …, 2019 - Wiley Online Library
This article reports a Microstrip design for low noise amplifier (LNA) using a packaged
commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration …
commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration …