A review on a negative capacitance field-effect transistor for low-power applications
Malvika, B Choudhuri, K Mummaneni - Journal of Electronic Materials, 2022 - Springer
Low-power devices have emerged as a topic of intense research investigations as the need
for a better and more comfortable life requirement has escalated to small and efficient …
for a better and more comfortable life requirement has escalated to small and efficient …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Negative differential resistance in negative capacitance FETs
We report the investigation of negative differential resistance (NDR) in negative capacitance
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
effect transistor (NCFET). According to the law of conservation of charge, the model is built …
2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications
B Zeng, M Liao, Q Peng, W Xiao, J Liao… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf 0.5
Zr 0.5 O 2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics …
Zr 0.5 O 2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics …
Utilization of negative-capacitance FETs to boost analog circuit performances
Negative-capacitance FETs (NCFETs) are a promising candidate for low-power circuits with
intrinsic features, eg, the steep switching slope. Prior works have shown potential for …
intrinsic features, eg, the steep switching slope. Prior works have shown potential for …
Reliability aspects of ferroelectric TiN/Hf0. 5Zr0. 5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
The reliability of Hf 0.5 Zr 0.5 O 2 (HZO) metal–ferroelectric–semiconductor capacitors grown
by plasma-assisted atomic oxygen deposition on Ge substrates is investigated with an …
by plasma-assisted atomic oxygen deposition on Ge substrates is investigated with an …
Hf0.5Zr0.5O2-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications
C Zacharaki, S Chaitoglou, N Siannas… - ACS Applied …, 2022 - ACS Publications
Ferroelectric field-effect transistors (FeFETs) with a TiN/Hf0. 5Zr0. 5O2 (HZO) gate stack on a
germanium p-type channel are fabricated as low-voltage nonvolatile memory (NVM) …
germanium p-type channel are fabricated as low-voltage nonvolatile memory (NVM) …
Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications
W Xiao, C Liu, Y Peng, S Zheng, Q Feng… - ACS Applied …, 2019 - ACS Publications
Metal–ferroelectric–metal (MFM) capacitors on flexible substrates are promising for flexible
nonvolatile memory applications, while the insufficient scalability of perovskite-based …
nonvolatile memory applications, while the insufficient scalability of perovskite-based …
Influence of body effect on sample-and-hold circuit design using negative capacitance FET
Negative capacitance FET (NCFET) has become a research topic of interest in recent years
due to its interesting properties. It has the ability to retain the polarization state even in the …
due to its interesting properties. It has the ability to retain the polarization state even in the …