The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

ZnO is one of the most important functional materials with a wide direct band gap, large
exciton binding energy, and facile growth of high quality nanostructures, which make it very …

The global energy sector is expected to experience a gradual shift towards renewable
energy sources in the coming decades. Climate change as well as energy security issues …

Substantial c-axis orientation of the hexagonal ZnO crystals with wurtzite structure
demonstrates only those two preferred peaks in the first-order spectra which are permitted …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton
binding energy. The unique property, ie, high efficient light emission at ultraviolet band …

Ⅱ-Ⅵ 族直接带隙化合物半导体氧化锌(ZnO) 的禁带宽度为3.37 eV, 室温下激子束缚能高达60
meV, 远高于室温热离化能(26 meV), 是制造高效率短波长探测, 发光和激光器件的理想材料 …

Abstract Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential
applications. Zinc-oxide-based materials, which have wide bandgap and large exciton …

Wavelength‐tunable light‐emitting diodes (LEDs) of GaxZn1–xO nanowire arrays are
demonstrated by a simple modified chemical vapor deposition heteroepitaxial growth on p …

ZnO is a wide bandgap semiconductor in which point and extended defects tune its
optoelectronic properties, and the identification of essential microscopic ingredients for such …