Advances in ultrashallow doping of silicon
C Zhang, S Chang, Y Dan - Advances in Physics: X, 2021 - Taylor & Francis
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …
and revolutionary quantum devices in quantum computing. In this review, we give a brief …
[HTML][HTML] Polymeric precision doping as an emerging technology for the downscaling of microelectronic Devices: State of the art
The pressing trend towards downscaling of microelectronic devices constantly requires
updated technologies capable of precise control of dopant atom dose in semiconductive …
updated technologies capable of precise control of dopant atom dose in semiconductive …
Freeze-burn: fabrication of porous carbon networks via polymer-templated rapid thermal annealing
JN Pagaduan, S Samitsu, J Varma… - ACS Applied Polymer …, 2022 - ACS Publications
Porous materials continue to establish critically important roles in applications extending
from greenhouse gas capture to thermal superinsulation. Their effective structural control by …
from greenhouse gas capture to thermal superinsulation. Their effective structural control by …
Large‐Area Uniform 1‐nm‐Level Amorphous Carbon Layers from 3D Conformal Polymer Brushes. A “Next‐Generation” Cu Diffusion Barrier?
YH Kang, S Lee, Y Choi, WK Seong, KH Han… - Advanced …, 2022 - Wiley Online Library
A reliable method for preparing a conformal amorphous carbon (a‐C) layer with a thickness
of 1‐nm‐level, is tested as a possible Cu diffusion barrier layer for next‐generation ultrahigh …
of 1‐nm‐level, is tested as a possible Cu diffusion barrier layer for next‐generation ultrahigh …
Silicon doping by polymer grafting: size distribution matters
Phosphorus δ-layers in SiO2 have been prepared by means of poly (methyl
methacrylate)(PMMA), terminated with a phosphorus-containing moiety acting as an …
methacrylate)(PMMA), terminated with a phosphorus-containing moiety acting as an …
Brush Layers of Bioinspired Polypeptoids for Deterministic Doping of Semiconductors
Monodisperse polypeptoids with 5, 10, 14, and 19 monomer units and a phosphorus
containing moiety at one end were prepared through the submonomer solid-phase synthetic …
containing moiety at one end were prepared through the submonomer solid-phase synthetic …
Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers
Ex-situ doping of 30 nm thick silicon-on-insulator (SOI) substrates is performed by using
polymers terminated with a doping containing moiety. Poly (methylmetachrylate) polymers …
polymers terminated with a doping containing moiety. Poly (methylmetachrylate) polymers …
Polymer brushes by grafting to reaction in melt: new insights into the mechanism
Ultrathin films of end‐tethered polymers, generally indicated as polymer brushes, have
gained great interest for their ability to modify the surface interaction with the surrounding …
gained great interest for their ability to modify the surface interaction with the surrounding …
[HTML][HTML] 3D to 2D perspectives-Traditional and new doping and metrology challenges at the nanoscale
In this perspectives paper we will explore the doping state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …
2D structures and materials, and the following impact on the metrology methods needed to …
Partition by molecular weight of polymer brushes: A combined reactive grand canonical Monte Carlo and self-consistent field investigation of grafting to processes
An approach that couples reactive Grand Canonical Monte Carlo (rGCMC) and Scheutjens–
Fleer Self-Consistent Field (SF-SCF) techniques has been used to draw topological maps of …
Fleer Self-Consistent Field (SF-SCF) techniques has been used to draw topological maps of …