We have studied the time-resolved reflectivity and transmission changes induced by
femtosecond laser pulses in hydrogenated and nonhydrogenated amorphous silicon thin …

Charge carrier dynamics in amorphous semiconductors has been a topic of intense
research that has been propelled by modern applications in thin-film solar cells, transistors …

Silicon-based, light-emitting devices (LED's) should find numerous uses in optoelectronics.
For example, the integration of silicon LED's with silicon microelectronics could lead to …

The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of
ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were …

With the advent of ultrafast lasers, powerful techniques have become available for directly
studying extremely fast relaxation processes in solid rather than learning about them …

Nonradiative bimolecular recombination of photocarriers in room-temperature a− S i: H films
was studied as a function of the photocarrier density and excitation energy, using ultrafast …

Single-shot ablation of amorphous silicon films of 50-, 100-and 150-nm thickness by laser
pulses of variable (0.2–6 ps) widths demonstrates non-monotonous variation of ablation …

A detailed study of the frequency-resolved spectroscopy technique is presented. We show
that the quadrature signal is the convolution of P′(1og τ), the distribution for the logarithm of …

Femtosecond optical techniques allowing the generation of intense optical pulses from the
near ultraviolet to the near infrared are used in the monitoring of ultrafast photophysical and …

The techniques of femtosecond laser spectroscopy have been applied to study the dynamics
of carriers in the neighborhood of the mobility edge in hydrogenated amorphous silicon. Just …