Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Carbon paste modified with Bi decorated multi-walled carbon nanotubes and CTAB as a sensitive voltammetric sensor for the detection of Caffeic acid
An environmentally friendly and uncomplicated sensor for the quantification of Caffeic acid
(CA) is proposed here. Bismuth decorated multi-walled carbon nanotubes drop cast with …
(CA) is proposed here. Bismuth decorated multi-walled carbon nanotubes drop cast with …
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi
that accumulates during growth. Here we present an alternate growth regime that kinetically …
that accumulates during growth. Here we present an alternate growth regime that kinetically …
GaAs1-xBix light emitting diodes
GaAs1-xBix light emitting diodes have been grown and characterized. The p–i–n structure
uses a 100nm intrinsic layer with a central 50nmGaAs1-xBix light emitting layer with 1.8 …
uses a 100nm intrinsic layer with a central 50nmGaAs1-xBix light emitting layer with 1.8 …
Bismuth surfactant growth of the dilute nitride GaNxAs1− x
The presence of a bismuth surfactant is found to increase the nitrogen incorporation in the
dilute nitride GaNxAs1− x by as much as 60% during growth by molecular beam epitaxy …
dilute nitride GaNxAs1− x by as much as 60% during growth by molecular beam epitaxy …
Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides
In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x
We report strong band gap photoluminescence at room temperature in dilute quaternary Ga
N x As 1− x− y Bi y alloys (x< 1.6%, y< 2.6%) grown by molecular beam epitaxy. The band …
N x As 1− x− y Bi y alloys (x< 1.6%, y< 2.6%) grown by molecular beam epitaxy. The band …
[HTML][HTML] Structural and optical characterization of dilute Bi-doped GaN nanostructures grown by molecular beam epitaxy
We have carried out detailed studies on the epitaxy and characterization of dilute Bi-doped
GaN nanostructures. A comprehensive investigation of Bi-doped GaN nanowires and quasi …
GaN nanostructures. A comprehensive investigation of Bi-doped GaN nanowires and quasi …