Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications
This manuscript presents a pioneering study on enhancing analog and radio frequency
performance through the implementation of negative capacitance source pocket double gate …
performance through the implementation of negative capacitance source pocket double gate …
Temperature‐Induced Changes in Multifin‐Schottky Barrier FinFETs: An Analog/RF Linearity Investigation
V Shalini, P Kumar - Advanced Theory and Simulations - Wiley Online Library
In this script, a Gallium Nitride (GaN)‐based FinFET structure is proposed with a multi‐
channel device that is designed and simulated. Here, the 3D‐Sentaures TCAD simulator is …
channel device that is designed and simulated. Here, the 3D‐Sentaures TCAD simulator is …