(57) ABSTRACT A composite hard mask is disclosed that prevents build up of metal etch
residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ …

BACKGROUND A MTJ memory elementis also referred to as a MTJ nanopilarandis a key
componentin magnetic recording devices, andin memory devices Such as magnetoresistive …

A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall
residue and damage is disclosed wherein a pattern is first formed in a hard mask or …

A non-volatile data retention circuit includes a complementary latch configured to generate
and store complementary non-volatile spin states corresponding to an input signal when in a …

BACKGROUND Magnetic Random Access Memory (MRAM) is non-vola tile memory in
which data is stored by programming a Mag netic Tunnel Junction (MTJ). MRAM is …

US9660181B2 - Logic chip including embedded magnetic tunnel junctions - Google Patents
US9660181B2 - Logic chip including embedded magnetic tunnel junctions - Google Patents …

According to an embodiment, a magnetoresistive random access memory (MRAM) device
comprises a bottom electrode, a stack, a dielectric material, a dielectric layer, and a …

The invention relates to an interface for providing multiple modes of accessing data,
including serial and parallel modes. Controllable non-volatile memory interfaces are …

Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device
includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive …

A method for fabricating a semiconductor structure includes forming a semiconductor layer
over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor …